DIFF Subgroup
H10B 41/41 of a memory region comprising a cell select transistor, e.g. NAND
Introduced: January 2023
Full Title
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates > characterised by the peripheral circuit region > of a memory region comprising a cell select transistor, e.g. NAND
No child classifications to compare. This is a leaf node in both IPC and CPC.