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PCE
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DIFF Subgroup
H10B 41/41

of a memory region comprising a cell select transistor, e.g. NAND

Introduced: January 2023

Full Title

Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates > characterised by the peripheral circuit region > of a memory region comprising a cell select transistor, e.g. NAND

No child classifications to compare. This is a leaf node in both IPC and CPC.