DIFF Subgroup
H10D 30/69 IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Introduced: January 2025
Full Title
Full titles differ between systems:
IPC:
Field-effect transistors [FET] > Insulated-gate field-effect transistors [IGFET] > IGFETs having charge trapping gate insulators, e.g. MNOS transistors
CPC:
Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00) > Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) > IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Of 3 combined children, 0 exist in both systems.
3 codes are CPC-only extensions.
Child Classifications
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