DIFF Subgroup
H10D 84/03 using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
Introduced: January 2025
Full Title
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers > Manufacture or treatment > characterised by using material-based technologies > using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
Of 3 combined children, 0 exist in both systems.
3 codes are CPC-only extensions.
Child Classifications
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