DIFF Subgroup
H10W 10/17 formed using trench refilling with dielectric materials, e.g. shallow trench isolations
Introduced: January 2026
Full Title
Isolation regions in semiconductor bodies between components of integrated devices > Isolation regions comprising dielectric materials > formed using trench refilling with dielectric materials, e.g. shallow trench isolations
No child classifications to compare. This is a leaf node in both IPC and CPC.