by contacting with diffusion material in the gaseous state

Introduced: January 1980

Last revised: January 2006

Full Title

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor > by contacting with diffusion material in the gaseous state

Classification Context

Section:: CHEMISTRY; METALLURGY
Class:: CRYSTAL GROWTH
Subclass:: SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

6 direct subcodes

Child Classifications

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C30B 31/08 the diffusion materials being a compound of the elements to be diffused
C30B 31/1 Reaction chambers; Selection of materials therefor
C30B 31/12 Heating of the reaction chamber
C30B 31/14 Substrate holders or susceptors
C30B 31/16 Feed and outlet means for the gases; Modifying the flow of the gases
C30B 31/18 Controlling or regulating