CPC Subgroup
G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Full Title
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof > Preparation processes not covered by groups G03F1/20 - G03F1/50 > Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Top Applicants
Top 10 applicants by patent filingsfor class G03, 2013–2023, worldwide · Source: EPO PATSTAT
- CANON JP 19,215
- CANON 12,916
- ASML NETHERLANDS NL 10,000
- FUJIFILM JP 7,814
- SAMSUNG ELECTRONICS COMPANY KR 5,181
- CARL ZEISS SMT DE 5,079
- RICOH COMPANY JP 4,343
- LG INNOTEK COMPANY KR 4,054
- KYOCERA DOCUMENT SOLUTIONS 3,812
- KYOCERA DOCUMENT SOLUTIONS JP 3,682