G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Introduced: January 2012
Title
Titles differ between systems:
IPC: Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
CPC: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Full Title
Full titles differ between systems:
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof > Preparation processes not covered by groups > Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof > Preparation processes not covered by groups G03F1/20 - G03F1/50 > Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
No child classifications to compare. This is a leaf node in both IPC and CPC.