Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof > Preparation processes not covered by groups > Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging

Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof > Preparation processes not covered by groups G03F1/20 - G03F1/50 > Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging