DIFF Subgroup
C30B 25/06 by reactive sputtering
Introduced: January 1980
Full Title
Full titles differ between systems:
IPC:
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth > by reactive sputtering
CPC:
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth > Epitaxial-layer growth > by reactive sputtering
No child classifications to compare. This is a leaf node in both IPC and CPC.
Top Applicants
Top Applicants (IPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429
Top Applicants (CPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379