Epitaxial-layer growth

Introduced: January 1980

Full Title

Full titles differ between systems:

IPC:

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth

CPC:

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth > Epitaxial-layer growth

Of 10 combined children, 9 exist in both systems.

1 codes are CPC-only extensions.

1 shared codes have differing titles between IPC and CPC.

IPC defines codes here since 1980.

Navigate with arrow keys, Enter to open

C30B 25/025 CPC only CPC only
C30B 25/04 Pattern deposit, e.g. by using masks since 1980 IPC+CPC Available in IPC and CPC
C30B 25/06 by reactive sputtering since 1980 IPC+CPC Available in IPC and CPC
C30B 25/08 Reaction chambers; Selection of materials therefor since 1980 IPC+CPC Available in IPC and CPC
C30B 25/10 Heating of the reaction chamber or the substrate since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 25/12 Substrate holders or susceptors since 1980 IPC+CPC Available in IPC and CPC
C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases since 1980 IPC+CPC Available in IPC and CPC
C30B 25/16 Controlling or regulating (controlling or regulating in general G05) since 1980 +1 CPC IPC+CPC Available in IPC and CPC
C30B 25/18 characterised by the substrate since 1980 +2 CPC IPC+CPC Available in IPC and CPC
C30B 25/22 Sandwich processes since 1980 IPC+CPC Available in IPC and CPC

Class C30,2013–2023, worldwide · Source: EPO PATSTAT

Class C30,2013–2023, worldwide · Source: EPO PATSTAT