DIFF Subgroup
C30B 25/20 the substrate being of the same materials as the epitaxial layer
Introduced: January 1980
Full Title
Full titles differ between systems:
IPC:
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth > characterised by the substrate > the substrate being of the same materials as the epitaxial layer
CPC:
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth > Epitaxial-layer growth > characterised by the substrate > the substrate being of the same materials as the epitaxial layer
Of 1 combined children, 0 exist in both systems.
1 codes are CPC-only extensions.
Child Classifications
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Top Applicants
Top Applicants (IPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429
Top Applicants (CPC)
Class C30,2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379