Skip to content
Search Classifications
Search for IPC and CPC classification codes or keywords
IPC Subgroup
C30B 25/2

the substrate being of the same materials as the epitaxial layer

Introduced: January 1980

Last revised: January 2006

Full Title

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth > characterised by the substrate > the substrate being of the same materials as the epitaxial layer

Classification Context

Section:
CHEMISTRY; METALLURGY
Class:
CRYSTAL GROWTH
Subclass:
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

Top Applicants

Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT

  1. CHINESE ACADEMY OF SCIENCES 1,516
  2. SUMCO CORPORATION JP 786
  3. SUMCO CORPORATION 703
  4. SUMITOMO ELECTRIC INDUSTRIES JP 604
  5. SHIN ETSU HANDOTAI COMPANY JP 556
  6. GLOBALWAFERS COMPANY TW 492
  7. APPLIED MATERIALS US 463
  8. SHIN ETSU HANDOTAI COMPANY 450
  9. SUMITOMO ELECTRIC INDUSTRIES 436
  10. SILTRONIC DE 429