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IPC Subgroup
C30B 25/02

Epitaxial-layer growth

Introduced: January 1980

Last revised: January 2006

Full Title

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth

Classification Context

Section:
CHEMISTRY; METALLURGY
Class:
CRYSTAL GROWTH
Subclass:
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

9 direct subcodes

Child Classifications

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  • C30B 25/04 Pattern deposit, e.g. by using masks
  • C30B 25/06 by reactive sputtering
  • C30B 25/08 Reaction chambers; Selection of materials therefor
  • C30B 25/1 Heating of the reaction chamber or the substrate
  • C30B 25/12 Substrate holders or susceptors
  • C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
  • C30B 25/16 Controlling or regulating
  • C30B 25/22 Sandwich processes