IPC Subgroup
C30B 25/04 Pattern deposit, e.g. by using masks
Introduced: January 1980
Last revised: January 2006
Full Title
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth > Epitaxial-layer growth > Pattern deposit, e.g. by using masks
Classification Context
- Section:
- CHEMISTRY; METALLURGY
- Class:
- CRYSTAL GROWTH
- Subclass:
- SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
Top Applicants
Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,516
- SUMCO CORPORATION JP 786
- SUMCO CORPORATION 703
- SUMITOMO ELECTRIC INDUSTRIES JP 604
- SHIN ETSU HANDOTAI COMPANY JP 556
- GLOBALWAFERS COMPANY TW 492
- APPLIED MATERIALS US 463
- SHIN ETSU HANDOTAI COMPANY 450
- SUMITOMO ELECTRIC INDUSTRIES 436
- SILTRONIC DE 429